← ME-3 · BJTS & AMPLIFICATION

Small-signal model

YOU WILL BE ABLE TO
  • Explain what a small-signal model is and when it is valid.
  • Compute transconductance gmg_m from the bias current.
  • Compute the input resistance rπr_\pi from gmg_m and β.
  • Draw and use the hybrid-π equivalent circuit.

A biased transistor is a nonlinear device sitting at an operating point. Superimpose a SMALL signal on that operating point — small enough that the exponential curve looks straight over the excursion — and the device's response to that signal is linear. That means every tool from Circuit Analysis becomes available again for the signal, provided you work with deviations from the bias point rather than absolute values. This is linearisation, and it is the single most important technique in analogue electronics.

The key parameter is the slope of the exponential at the operating point: how much collector current a small change in base-emitter voltage produces. Differentiate IC=ISeVBE/VTI_C = I_S e^{V_{BE}/V_T} and something remarkably clean falls out — the slope depends only on the bias current and the thermal voltage, not on the device at all.

gm=∂IC∂VBE=ICVTg_m = \frac{\partial I_C}{\partial V_{BE}} = \frac{I_C}{V_T}transconductance, siemens

With VT≈26V_T \approx 26 mV at room temperature, a bias current of 11 mA gives gm≈38g_m \approx 38 mS — and any BJT biased at 11 mA gives the same, regardless of part number, size, or β. That universality is why BJTs remain preferred for precision analogue work: their transconductance is set by a current you choose and a physical constant, while a MOSFET's depends on process and geometry.

The base, however, does draw current, so the model needs an input resistance. Since iB=iC/βi_B = i_C/\beta and iC=gmvBEi_C = g_m v_{BE}, the resistance looking into the base is:

rπ=βgm=βVTICr_\pi = \frac{\beta}{g_m} = \frac{\beta V_T}{I_C}base input resistance
WORKED EXAMPLE

Small-signal parameters from a bias point

  1. Take Lesson 2's design: IC≈1.9I_C \approx 1.9 mA, β nominally 100.
  2. gm=IC/VT=1.9 mA/26 mV≈73g_m = I_C/V_T = 1.9\ \text{mA}/26\ \text{mV} \approx 73 mS.
  3. rπ=β/gm=100/0.073≈1.37r_\pi = \beta/g_m = 100/0.073 \approx 1.37 kΩ.
  4. Note the asymmetry that makes the device useful: 7373 mS means one millivolt at the base commands 7373 µA at the collector.
gm≈73g_m \approx 73 mS, rπ≈1.37r_\pi \approx 1.37 kΩ
WORKED EXAMPLE

How small is small?

  1. The linearisation is valid while the signal across the base-emitter junction is small compared with VT≈26V_T \approx 26 mV.
  2. The practical limit for low distortion is a few millivolts of vBEv_{BE} — perhaps 55 to 1010 mV peak.
  3. Beyond that the exponential's curvature shows up as harmonic distortion: the output is no longer a scaled copy of the input.
  4. This is why a high-gain stage needs a small input, and why large signals need feedback (ME-4) or a fundamentally different topology.
A few millivolts at the junction — VTV_T is the yardstick.

PRACTICE

Q1

Find gmg_m for a BJT biased at IC=0.5I_C = 0.5 mA.

Q2

For that device with β=150\beta = 150, find rπr_\pi.

Q3

Two transistors with very different β values are biased at the same IC=2I_C = 2 mA. Which small-signal parameter is the same for both, and which differs?

Q4

Why do DC supply sources become short circuits to ground in a small-signal model?

Small-signal model · ME-3 · iLearnSTEM Electronics